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RB050LA-30
Diodes
Schottky barrier diode
RB050LA-30
Applications General rectification Features 1) Small and Thin power mold type (PMDT) 2) Low IR 3) High reliability External dimensions (Unit : mm)
2.60.1 0.19
Land size figure
2.0 1.4
3.80.1
4.70.2
1.50.1
0.950.1 0.5
PMD
ROHM : PMD
0.950.1
00.1
Structure Silicon Epitaxial Planer
0.19
Structure
0.2 0.3
Manufacture date
Taping dimensions (Unit : mm)
4.00.1 2.00.05 8.00.1 1.550.1 0 1.750.05 0.250.05
1.4
5.50.05
1.550.05 2.80.05 8.00.1 1.250.1
Absolute maximum ratings (Ta=25C) Parameter
Rever voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current * Forward cirremt surge peak (60Hz1cyc) Junction temperature Storage temperature
Limits Symbol 30 VRM 30 VR 3 Io 70 IFSM 150 Tj -55 to +150 Tstg (*1)Tc=90max Mounted on epoxy board. 180Half sine wave
4.90.1
9.50.1
Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.45 150
Unit V A
Conditions IF=3.0A VR=30V
12.00.3
4.4
00.1
1/3
RB050LA-30
Diodes
Electrical characteristic curves
10 Ta=75
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
1000000 100000 10000 Ta=125
Ta=150 Ta=125
10000
f=1MHz
1 Ta=150 0.1 Ta=25 Ta=-25
Ta=75 1000 100 10 1 0.1 Ta=-25 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
100
0.01
0.001 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600
0.01 0 5 10 15 20 25 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30
10 0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
440
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
430 420 410 400 390
AVE:414.1mV
Ta=25 IF=3A n=30pcs
200 180 160 140 120 100 80 60 40 20 0
AVE:18.82uA
1050
Ta=25 VR=30V n=30pcs
1040 1030 1020 1010 1000 990 980 970 960 950 AVE:1012.1pF
Ta=25 f=1MHz VR=0V n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A)
30
Ifsm
300
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
1cyc 8.3ms
25 20 15 10 AVE:12.3ns 5 0
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
250 200 150 100 50 0
1
Ifsm 8.3ms 8.3ms 1cyc
AVE:214.0A
10
100
IFSM DISRESION MAP
trr DISPERSION MAP
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
500
Ifsm t
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board
3 Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
400
100 Rth(j-c)
IM=100m IF=1A
2
D=1/2 Sin(180)
300
10
200
1
DC
1
1ms time
100
0
0.1
TIME:t(ms) IFSM-t CHARACTERISTICS
1
10
100
0.1 0.001
300us
0 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 5
0.1 10 TIME:t(s) Rth-t CHARACTERISTICS
2/3
RB050LA-30
Diodes
3
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
7 6
0A 0V t D=1/2 T Io VR D=t/T VR=15V Tj=150
7 6
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V t DC D=1/2 T
Io VR D=t/T VR=15V Tj=150
REVERSE POWER DISSIPATION:PR (W)
2
DC D=1/2
5 4 3 2 1
DC
5 4 3 2 1
1
Sin(180)
Sin(180)
0 0
Sin(180)
0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 150
0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 150
10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30
30 25 20 15 10 5 0 AVE:14.6kV No break at 30kV
ELECTROSTATIC DDISCHARGE TEST ESD(KV)
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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